Datasheet > RN1110MFV(TPL3)

RN1110MFV(TPL3)

更新时间： 2024-09-21 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	321K
描述
Digital Transistors 100mA 50volts 3Pin 4.7Kohms

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中文翻译

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技术参数
数据手册

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RN1110MFV(TPL3) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.8	Is Samacsys：	N
Base Number Matches：	1

RN1110MFV(TPL3) 数据手册

RN1110MFV,RN1111MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

(Bias Resistor built-in Transistor)

RN1110MFV,RN1111MFV

Unit: mm

1.2 ± 0.05

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

0.80 ± 0.05

Ultra-small package, suited to very high density mounting

Incorporating a bias resistor into the transistor reduces the number of parts, so

enabling the manufacture of ever more compact equipment and lowering

assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN2110MFV,RN2111MFV

Equivalent Circuit

1. BASE

2. EMITTER

3. COLLECTOR

VESM

JEDEC

JEITA

―

TOSHIBA

2-1L1A

Absolute Maximum Ratings (Ta = 25°C)

Weight: 1.5 mg (typ.)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

150

stg

−55 to 150

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)

Pad Dimension（Reference）

Unit：mm

0.5

0.45

1.15

0.4

0.45

0.4

2010-06-01

12 3 4 5 6

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