Datasheet > RN1111FS(TPL3)

RN1111FS(TPL3)

更新时间： 2024-11-26 10:10:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	130K
描述
Digital Transistors 50mA 20volts 3Pin 10Kohms

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中文翻译

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数据手册

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RN1111FS(TPL3) 数据手册

RN1110FS,RN1111FS

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)

RN1110FS, RN1111FS

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

JEDEC

JEITA

―

•

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

TOSHIBA

2-1E1A

Weight: 0.0006 g (typ.)

Complementary to RN2110FS, RN2111FS

0.8±0.05

1.0±0.05

Equivalent Circuit and Bias Resistor Values

0.1±0.05

1.BASE

2.EMITTER

fSM

3.COLLECOTR

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature range

150

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Symbol

Test Condition

= 20 V, I = 0

Min

⎯

Typ.

⎯

Max

100

⎯

Unit

CBO

Emitter cut-off current

= 5 V, I = 0

⎯

EBO

DC current gain

= 5 V, I = 1 mA

300

⎯

CE (sat)

Collector-emitter saturation voltage

Collector output capacitance

= 5 mA, I = 0.25 mA

⎯

0.15

⎯

= 10 V, I = 0, f = 1 MHz

⎯

1.2

4.7

RN1110FS

RN1111FS

3.76

5.64

Input resistor

⎯

kΩ

2007-11-01

12 3 4 5

中文翻译

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与RN1111FS(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN1111FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, THIN, TESM, 2-1B1A, 3 PIN, BIP
RN1111FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1111MFV	TOSHIBA	获取价格	暂无描述
RN1111MFV(TL3MAA)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1111MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1111MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 100mA 50volts 3Pin 10Kohms
RN1112	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1112(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1112(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN1112(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General

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