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RN1112_07 PDF预览

RN1112_07

更新时间： 2024-02-14 12:07:01
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
5页 268K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN1112_07 数据手册

 浏览型号RN1112_07的Datasheet PDF文件第2页浏览型号RN1112_07的Datasheet PDF文件第3页浏览型号RN1112_07的Datasheet PDF文件第4页浏览型号RN1112_07的Datasheet PDF文件第5页 
RN1112,RN1113  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1112, RN1113  
and Driver Circuit Applications  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
z With built-in bias resistors  
z Simplified circuit design  
z Reduced number of parts and simplified process  
z Complementary to RN2112, RN2113  
Equivalent Circuit  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
JEDEC  
―
―
EIAJ  
5
V
TOSHIBA  
Weight: 2.4mg  
2-2H1A  
Collector current  
I
100  
mA  
mW  
°C  
°C  
c
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
c
T
150  
j
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
100  
100  
700  
0.3  
―
nA  
nA  
―
CBO  
CB  
EB  
CE  
E
I
―
= 5 V, I = 0  
C
EBO  
DC current gain  
h
―
= 5 V, I = 1 mA  
120  
―
―
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Translation frequency  
V
―
I
= 5 mA, I = 0.25 mA  
0.1  
250  
3
V
C
B
f
―
V
V
= 10 V, I = 5 mA  
―
MHz  
pF  
T
CE  
CB  
C
―
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
E
―
6
ob  
RN1112  
Input resistor  
15.4  
32.9  
22  
47  
28.6  
61.1  
R1  
―
―
kΩ  
RN1113  
1
2007-11-01  
12345

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