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RN1111FV PDF预览

RN1111FV

更新时间: 2024-11-21 21:18:11
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 253K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal

RN1111FV 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.7
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

RN1111FV 数据手册

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RN1110FV,RN1111FV  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1110FV,RN1111FV  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
Unit: mm  
1.2 ± 0.05  
0.80 ± 0.05  
With built-in bias resistors  
Simplify circuit design  
Reduce a quantity of parts and manufacturing process  
Complementary to RN2110FV, RN2111FV  
1
3
2
Equivalent Circuit  
1.BASE  
2.EMITTER  
VESM  
3.COLLECTOR  
JEDEC  
JEITA  
TOSHIBA  
Maximum Ratings  
Weight: 0.0015 g(typ.)  
(Ta = 25°C)  
Characterisstic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
50  
50  
V
V
CBO  
CEO  
EBO  
0.5mm  
5
V
0.45mm  
0.45mm  
I
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
P (Note)  
C
150  
T
j
150  
0.4mm  
Storage temperature range  
T
55~150  
stg  
Note : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
I
V
V
V
= 50V, I = 0  
100  
100  
700  
0.3  
nA  
nA  
CBO  
CB  
EB  
CE  
E
= 5V, I = 0  
C
EBO  
DC current gain  
h
= 5V, I = 1mA  
120  
FE  
C
Collector-emitter saturation voltage  
Translation frequency  
V
I
= 5mA, I = 0.25mA  
0.1  
250  
3
V
CE (sat)  
C
B
f
V
= 10V, I = 5mA  
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
V
= 10V, I = 0, f = 1MHz  
E
ob  
RN1110FV  
Input resistor  
3.29  
7
4.7  
10  
6.11  
13  
R1  
k  
RN1111FV  
1
2004-03-22  

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