RN1113FT

更新时间： 2024-02-21 10:12:34

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
3页	107K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

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中文翻译

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数据手册

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RN1113FT 数据手册

RN1112FT,RN1113FT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1112FT,RN1113FT

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications.

Unit: mm

High-density mount is possible because of devices housed in very thin

TESM packages.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

Wide range of resistor values are available to use in various circuit

designs.

Complementary to RN2112FT, RN2113FT

Equivalent Circuit and Bias Resistor Values

JEDEC

JEITA

―

TOSHIBA

Weight:

g (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector poser dissipation

Junction temperature

Storage temperature range

(Note)

100

150

-55~150

stg

Note: Total rating

2002-01-29

12 3

中文翻译

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