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RN1113MFV PDF预览

RN1113MFV

更新时间: 2024-11-26 14:56:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 356K
描述
NPN Bias Resistor Built-in Transistors (BRT), 47 kΩ/Infinity, SOT-723(VESM)

RN1113MFV 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.59
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

RN1113MFV 数据手册

 浏览型号RN1113MFV的Datasheet PDF文件第2页浏览型号RN1113MFV的Datasheet PDF文件第3页浏览型号RN1113MFV的Datasheet PDF文件第4页浏览型号RN1113MFV的Datasheet PDF文件第5页浏览型号RN1113MFV的Datasheet PDF文件第6页 
RN1112MFV, RN1113MFV  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)  
RN1112MFV, RN1113MFV  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Ultra-small package, suited to very high density mounting  
Incorporating a bias resistor into the transistor reduces the number of parts, so  
enabling the manufacture of ever more compact equipment and lowering assembly  
cost.  
A wide range of resistor values is available for use in various circuits.  
Complementary to the RN2112MFV, RN2113MFV  
Equivalent Circuit  
1.BASE  
2.EMITTER  
VESM  
3.COLLECTOR  
JEDEC  
JEITA  
Absolute Maximum Ratings (Ta = 25°C)  
TOSHIBA  
1-1Q1S  
Weight: 1.5 mg (typ.)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
50  
50  
Collector-emitter voltage  
Emitter-base voltage  
V
5
V
Collector current  
I
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
150  
C
T
150  
j
T
55 to 150  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant  
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)  
Land Pattern Dimensions (for reference only)  
0.5  
Unitmm  
0.45  
1.15  
0.4  
0.45  
Start of commercial production  
0.4  
0.4  
2005-02  
© 2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-01-07  
1

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