Datasheet > RN1113MFV

RN1113MFV

更新时间： 2023-12-06 20:13:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	356K
描述
NPN Bias Resistor Built-in Transistors (BRT), 47 kΩ/Infinity, SOT-723(VESM)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RN1113MFV 数据手册

RN1112MFV, RN1113MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)

RN1112MFV, RN1113MFV

Unit: mm

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

 Ultra-small package, suited to very high density mounting

 Incorporating a bias resistor into the transistor reduces the number of parts, so

enabling the manufacture of ever more compact equipment and lowering assembly

cost.

 A wide range of resistor values is available for use in various circuits.

 Complementary to the RN2112MFV, RN2113MFV

Equivalent Circuit

1.BASE

2.EMITTER

VESM

3.COLLECTOR

JEDEC

JEITA

―

Absolute Maximum Ratings (Ta = 25°C)

TOSHIBA

1-1Q1S

Weight: 1.5 mg (typ.)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

150

−55 to 150

stg

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

Land Pattern Dimensions (for reference only)

0.5

Unit：mm

0.45

1.15

0.4

0.45

Start of commercial production

0.4

2005-02

Toshiba Electronic Devices & Storage Corporation

2019-01-07

12 3 4 5 6

中文翻译

下载PDF

与RN1113MFV相关器件

型号	品牌	获取价格	描述	数据表
RN1114	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1114(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1114(TE85L,F)	TOSHIBA	获取价格	暂无描述
RN1114_07	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1114FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1114FT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1114FT(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1114FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1114MFV	TOSHIBA	获取价格	NPN Bias Resistor Built-in Transistors (BRT),
RN1114MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 50volts 100mA 3Pin 1.0Kohms x 10Kohms