是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.59 |
其他特性: | BUILT-IN BIAS RESISTOR | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 120 | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.15 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN1114 | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | |
RN1114(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General | |
RN1114(TE85L,F) | TOSHIBA |
获取价格 |
暂无描述 | |
RN1114_07 | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | |
RN1114FT | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera | |
RN1114FT(TE85L) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR | |
RN1114FT(TE85L,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR | |
RN1114FV | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera | |
RN1114MFV | TOSHIBA |
获取价格 |
NPN Bias Resistor Built-in Transistors (BRT), | |
RN1114MFV(TPL3) | TOSHIBA |
获取价格 |
Digital Transistors 50volts 100mA 3Pin 1.0Kohms x 10Kohms |