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RN1114MFV PDF预览

RN1114MFV

更新时间： 2024-11-26 14:57:31
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 780K
描述
NPN Bias Resistor Built-in Transistors (BRT), 1 kΩ/10 kΩ, SOT-723(VESM)

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中文翻译

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RN1114MFV 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.74其他特性：BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：50
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：250 MHz
Base Number Matches：1

RN1114MFV 数据手册

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RN1114MFV to RN1118MFV  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)  
RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV  
Switching Applications  
Inverter Circuit Applications  
Unit: mm  
Interface Circuit Applications  
Driver Circuit Applications  
With built-in bias resistors  
Simplify circuit design  
Reduce a quantity of parts and manufacturing process  
Complementary to RN2114MFV to RN2118MFV  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1114MFV  
RN1115MFV  
RN1116MFV  
RN1117MFV  
RN1118MFV  
1
10  
10  
10  
4.7  
10  
2.2  
4.7  
10  
47  
1.BASE  
2.EMITTER  
3.COLLECTOR  
VESM  
JEDEC  
―
―
JEITA  
TOSHIBA  
1-1Q1S  
Weight: 1.5 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Land Pattern Dimensions  
(for reference only)  
Collector-base voltage  
RN1114MFV  
V
V
50  
V
V
CBO  
CEO  
to 1118MFV  
Collector-emitter voltage  
50  
Unit: mm  
RN1114MFV  
RN1115MFV  
RN1116MFV  
RN1117MFV  
RN1118MFV  
5
0.5  
6
7
0.45  
Emitter-base voltage  
V
V
EBO  
15  
1.15  
0.4  
25  
0.45  
Collector current  
I
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
150  
C
RN1114MFV  
to 111M8FV  
0.4  
0.4  
T
150  
j
T
−55 to 150  
°C  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant  
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated  
failure rate, etc).  
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)  
Start of commercial production  
2005-09  
© 2016-2020  
Toshiba Electronic Devices & Storage Corporation  
2020-11-17  
1
12345678

中文翻译

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