Datasheet > RN1115MFV(TPL3)

RN1115MFV(TPL3)

更新时间： 2024-11-11 19:52:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	182K
描述
Digital Transistors 2.2Kohms x 10Kohms

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中文翻译

获取价格

技术参数
数据手册

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RN1115MFV(TPL3) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Factory Lead Time：	12 weeks	风险等级：	5.71
Base Number Matches：	1

RN1115MFV(TPL3) 数据手册

RN1114MFV∼RN1118MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV

Switching Applications

Unit: mm

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

1.2 ± 0.05

0.80 ± 0.05

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2114MFV to RN2118MFV

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1114MFV

RN1115MFV

RN1116MFV

RN1117MFV

RN1118MFV

4.7

1.BASE

2.2

4.7

2.EMITTER

3.COLLECTOR

VESM

JEDEC

JEITA

―

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

RN1114MFV

to 1118MFV

Land Pattern Example

CBO

CEO

RN1114MFV

RN1115MFV

RN1116MFV

RN1117MFV

RN1118MFV

0.5mm

0.45mm

Emitter-base voltage

EBO

0.45mm

0.4mm

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1114MFV

to 111M8FV

(Note 1)

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

Start of commercial production

2005-09

2014-03-01

12 3 4 5 6 7 8

中文翻译

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与RN1115MFV(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN1116	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1116(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1116(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1116F	TOSHIBA	获取价格	暂无描述
RN1116F(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1116F(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1116FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1116FT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1116FT(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1116FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera

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