Datasheet > RN1117MFV(TL3,T)

RN1117MFV(TL3,T)

更新时间： 2024-01-04 06:47:12

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	704K
描述
Small Signal Bipolar Transistor

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中文翻译

获取价格

技术参数
数据手册

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RN1117MFV(TL3,T) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

RN1117MFV(TL3,T) 数据手册

RN1114MFV to RN1118MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV

Switching Applications

Unit: mm

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

 With built-in bias resistors

 Simplify circuit design

Reduce a quantity of parts and manufacturing process



 Complementary to RN2114MFV to RN2118MFV

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1114MFV

RN1115MFV

RN1116MFV

RN1117MFV

RN1118MFV

4.7

2.2

4.7

1.BASE

2.EMITTER

3.COLLECTOR

VESM

JEDEC

―

JEITA

TOSHIBA

1-1Q1S

Weight: 1.5 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Land Pattern Dimensions

(for reference only)

Unit: mm

Collector-base voltage

RN1114MFV

CBO

CEO

to 1118MFV

Collector-emitter voltage

RN1114MFV

RN1115MFV

RN1116MFV

RN1117MFV

RN1118MFV

0.5

0.45

Emitter-base voltage

EBO

1.15

0.4

0.45

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

150

RN1114MFV

to 111M8FV

0.4

150

−55 to 150

°C

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

Start of commercial production

2005-09

Toshiba Electronic Devices & Storage Corporation

2018-11-26

12 3 4 5 6 7 8

中文翻译

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与RN1117MFV(TL3,T)相关器件

型号	品牌	获取价格	描述	数据表
RN1118	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1118(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1118F(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1118F(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1118FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1118FT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1118FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1118MFV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP Genera
RN1118MFV(TL3,T)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1118MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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