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RN1118MFV(TPL3) PDF预览

RN1118MFV(TPL3)

更新时间： 2024-01-13 04:14:59
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 182K
描述
Digital Transistors 50volts 100mA 3Pin 47Kohms x 10Kohms

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中文翻译

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RN1118MFV(TPL3) 技术参数

生命周期：ActiveReach Compliance Code：unknown
Factory Lead Time：12 weeks风险等级：5.72
Base Number Matches：1

RN1118MFV(TPL3) 数据手册

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RN1114MFV∼RN1118MFV  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV  
Switching Applications  
Unit: mm  
Inverter Circuit Applications  
Interface Circuit Applications  
Driver Circuit Applications  
1.2 ± 0.05  
0.80 ± 0.05  
z With built-in bias resistors  
1
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2114MFV to RN2118MFV  
3
2
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1114MFV  
RN1115MFV  
RN1116MFV  
RN1117MFV  
RN1118MFV  
1
10  
10  
10  
4.7  
10  
1.BASE  
2.2  
4.7  
10  
47  
2.EMITTER  
3.COLLECTOR  
VESM  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-1L1A  
Weight: 1.5 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
RN1114MFV  
to 1118MFV  
V
50  
V
V
Land Pattern Example  
CBO  
V
50  
CEO  
RN1114MFV  
RN1115MFV  
RN1116MFV  
RN1117MFV  
RN1118MFV  
5
0.5mm  
6
7
0.45mm  
Emitter-base voltage  
V
V
EBO  
15  
0.45mm  
25  
0.4mm  
Collector current  
I
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
RN1114MFV  
to 111M8FV  
P
(Note 1)  
150  
C
T
150  
j
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)  
Start of commercial production  
2005-09  
1
2014-03-01  
12345678

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