Datasheet > RN1118MFV(TL3,T)

RN1118MFV(TL3,T)

更新时间： 2024-01-08 00:53:16

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	704K
描述
Small Signal Bipolar Transistor

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中文翻译

获取价格

技术参数
数据手册

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RN1118MFV(TL3,T) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

RN1118MFV(TL3,T) 数据手册

RN1114MFV to RN1118MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV

Switching Applications

Unit: mm

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

 With built-in bias resistors

 Simplify circuit design

Reduce a quantity of parts and manufacturing process



 Complementary to RN2114MFV to RN2118MFV

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1114MFV

RN1115MFV

RN1116MFV

RN1117MFV

RN1118MFV

4.7

2.2

4.7

1.BASE

2.EMITTER

3.COLLECTOR

VESM

JEDEC

―

JEITA

TOSHIBA

1-1Q1S

Weight: 1.5 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Land Pattern Dimensions

(for reference only)

Unit: mm

Collector-base voltage

RN1114MFV

CBO

CEO

to 1118MFV

Collector-emitter voltage

RN1114MFV

RN1115MFV

RN1116MFV

RN1117MFV

RN1118MFV

0.5

0.45

Emitter-base voltage

EBO

1.15

0.4

0.45

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

150

RN1114MFV

to 111M8FV

0.4

150

−55 to 150

°C

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

Start of commercial production

2005-09

Toshiba Electronic Devices & Storage Corporation

2018-11-26

12 3 4 5 6 7 8

中文翻译

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与RN1118MFV(TL3,T)相关器件

型号	品牌	获取价格	描述	数据表
RN1118MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1118MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 50volts 100mA 3Pin 47Kohms x 10Kohms
RN1119FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1119MFV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 3 PIN, BIP General Purpos
RN1119MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1119MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors Bias Resistor
RN112	ETC	获取价格	Current-compensated Chokes
RN1120	STMICROELECTRONICS	获取价格	20A, 1000V, SILICON, RECTIFIER DIODE
RN112-0.4/02	ETC	获取价格	DROSSEL NETZ PCB 39MH 0.4A
RN112-0.4-02	ETC	获取价格	Current-compensated Chokes

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