Datasheet > RN1118F(TPL3,F)

RN1118F(TPL3,F)

更新时间： 2024-11-02 20:50:51

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
8页	209K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR

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中文翻译

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技术参数
数据手册

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RN1118F(TPL3,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	50	元件数量：	1
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1118F(TPL3,F) 数据手册

RN1114F~RN1118F

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1114F,RN1115F,RN1116F,RN1117F,RN1118F

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z With built-in bias resistors.

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2114F to 2118F

Equivalent Circuit and Bias Resistor Values

Type No.

R (kΩ)

RN1114F

RN1115F

RN1116F

RN1117F

RN1118F

4.7

2.2

4.7

ESM

JEDEC

―

JEITA

TOSHIBA

2-2HA1A

Weight: 2.3 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

RN1114F to 1118F

Collector-emitter voltage

CBO

CEO

RN1114F

RN1115F

Emitter-base voltage

RN1116F

RN1117F

RN1118F

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

100

RN1114F to 1118F

150

stg

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-04-06

12 3 4 5 6 7 8

中文翻译

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与RN1118F(TPL3,F)相关器件

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RN1118FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1118FT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1118FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1118MFV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP Genera
RN1118MFV(TL3,T)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1118MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1118MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 50volts 100mA 3Pin 47Kohms x 10Kohms
RN1119FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1119MFV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 3 PIN, BIP General Purpos
RN1119MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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