Datasheet > RN1114FT

RN1114FT

更新时间： 2023-01-03 02:07:21

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	187K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP General Purpose Small Signal

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RN1114FT 数据手册

RN1114FT~RN1118FT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z Built-in bias resistors

z Enabling simplified circuit design

z Enabling reduction in the quantity of parts and manufacturing process

z Complementary to the RN2114FT to 2118FT

Equivalent Circuit and Bias Resistor Values

Type No.

R (kΩ)

RN1114FT

RN1115FT

RN1116FT

RN1117FT

RN1118FT

4.7

2.2

4.7

JEDEC

―

JEITA

TOSHIBA

2-1B1A

Weight: 2.2 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

RN1114FT to 1118FT

Collector-emitter voltage

CBO

CEO

RN1114FT

RN1115FT

Emitter-base voltage

RN1116FT

RN1117FT

RN1118FT

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

100

RN1114FT to 1118FT

150

stg

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-04-06

12 3 4 5 6 7 8

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