Datasheet > RN1114(TE85L,F)

RN1114(TE85L,F)

更新时间： 2024-11-25 17:11:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	207K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RN1114(TE85L,F) 数据手册

RN1114~RN1118

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1114, RN1115, RN1116, RN1117, RN1118

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z With built-in bias resistors.

z Simplified circuit design

z Reduced number of parts and simplified manufacturing process

z Complementary to RN2114 to 2118

Equivalent Circuit and Bias Resistor Values

Type No.

R (kΩ)

RN1114

RN1115

RN1116

RN1117

RN1118

4.7

2.2

4.7

JEDEC

―

JEITA

TOSHIBA

2-2H1A

Weight: 2.4mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1114 to 1118

Collector-emitter voltage

RN1114

RN1115

RN1116

RN1117

RN1118

Emitter-base voltage

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

100

RN1114 to 1118

150

stg

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-04-06

12 3 4 5 6 7 8

中文翻译

下载PDF

与RN1114(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN1114_07	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1114FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1114FT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1114FT(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1114FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1114MFV	TOSHIBA	获取价格	NPN Bias Resistor Built-in Transistors (BRT),
RN1114MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 50volts 100mA 3Pin 1.0Kohms x 10Kohms
RN1115	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1115(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1115(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR