Datasheet > RN1114(TE85L,F)

RN1114(TE85L,F)

更新时间： 2024-02-02 23:49:53

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RN1114(TE85L,F) 数据手册

RN1114~RN1118

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1114, RN1115, RN1116, RN1117, RN1118

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z With built-in bias resistors.

z Simplified circuit design

z Reduced number of parts and simplified manufacturing process

z Complementary to RN2114 to 2118

Equivalent Circuit and Bias Resistor Values

Type No.

R (kΩ)

RN1114

RN1115

RN1116

RN1117

RN1118

4.7

2.2

4.7

JEDEC

―

JEITA

TOSHIBA

2-2H1A

Weight: 2.4mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1114 to 1118

Collector-emitter voltage

RN1114

RN1115

RN1116

RN1117

RN1118

Emitter-base voltage

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

100

RN1114 to 1118

150

stg

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-04-06

12 3 4 5 6 7 8

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