Datasheet > RN1113FV(TPL3)

RN1113FV(TPL3)

更新时间： 2024-11-25 19:54:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	263K
描述
Small Signal Bipolar Transistor

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中文翻译

获取价格

技术参数
数据手册

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RN1113FV(TPL3) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

RN1113FV(TPL3) 数据手册

RN1112FV,RN1113FV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1112FV, RN1113FV

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

1.2 ± 0.05

0.80 ± 0.05

ꢀ

Built-in bias resistors

Simplified circuit design

Reduced quantity of parts and manufacturing process

Complementary to RN2112FV and RN2113FV

Equivalent Circuit

1.BASE

2.EMITTER

Maximum Ratings (Ta = 25°C)

VESM

3.COLLECTOR

Characteristic

Symbol

Rating

Unit

JEDEC

JEITA

―

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

TOSHIBA

2-1L1A

Weight: 0.0015 g (typ.)

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note)

150

0.5mm

150

0.45mm

stg

−55~150

Note: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)

0.4mm

Electrical Characteristics

(Ta = 25 C)

Test

Circuit

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

= 50V, I = 0

100

700

0.3

―

CBO

= 5V, I = 0

―

EBO

DC current gain

= 5V, I = 1mA

120

―

Collector-emitter saturation voltage

Translation frequency

= 5mA, I = 0.25mA

0.1

250

―

CE (sat)

= 10V, I = 5mA

―

MHz

―

Collector output capacitance

V = 10V, I = 0, f = 1MHz

CB E

―

RN1112FV

Input resistor

15.4

32.9

28.6

61.1

―

kΩ

RN1113FV

2004-06-28

12 3 4 5

中文翻译

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