Datasheet > RN1113FV(TPL3)

RN1113FV(TPL3)

更新时间： 2024-02-24 13:50:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	263K
描述
Small Signal Bipolar Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1113FV(TPL3) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

RN1113FV(TPL3) 数据手册

RN1112FV,RN1113FV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1112FV, RN1113FV

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

1.2 ± 0.05

0.80 ± 0.05

ꢀ

Built-in bias resistors

Simplified circuit design

Reduced quantity of parts and manufacturing process

Complementary to RN2112FV and RN2113FV

Equivalent Circuit

1.BASE

2.EMITTER

Maximum Ratings (Ta = 25°C)

VESM

3.COLLECTOR

Characteristic

Symbol

Rating

Unit

JEDEC

JEITA

―

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

TOSHIBA

2-1L1A

Weight: 0.0015 g (typ.)

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note)

150

0.5mm

150

0.45mm

stg

−55~150

Note: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)

0.4mm

Electrical Characteristics

(Ta = 25 C)

Test

Circuit

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

= 50V, I = 0

100

700

0.3

―

CBO

= 5V, I = 0

―

EBO

DC current gain

= 5V, I = 1mA

120

―

Collector-emitter saturation voltage

Translation frequency

= 5mA, I = 0.25mA

0.1

250

―

CE (sat)

= 10V, I = 5mA

―

MHz

―

Collector output capacitance

V = 10V, I = 0, f = 1MHz

CB E

―

RN1112FV

Input resistor

15.4

32.9

28.6

61.1

―

kΩ

RN1113FV

2004-06-28

12 3 4 5

中文翻译

下载PDF

与RN1113FV(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN1113MFV	TOSHIBA	获取价格	NPN Bias Resistor Built-in Transistors (BRT),
RN1114	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1114(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1114(TE85L,F)	TOSHIBA	获取价格	暂无描述
RN1114_07	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1114FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1114FT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1114FT(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1114FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1114MFV	TOSHIBA	获取价格	NPN Bias Resistor Built-in Transistors (BRT),