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RN1112(TE85L,F) PDF预览

RN1112(TE85L,F)

更新时间： 2024-11-25 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
5页 272K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416

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RN1112(TE85L,F) 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.78Is Samacsys：N
最大集电极电流 (IC)：0.1 A最小直流电流增益 (hFE)：120
元件数量：1极性/信道类型：NPN
最大功率耗散 (Abs)：0.1 W子类别：BIP General Purpose Small Signal
表面贴装：YES晶体管元件材料：SILICON
Base Number Matches：1

RN1112(TE85L,F) 数据手册

 浏览型号RN1112(TE85L,F)的Datasheet PDF文件第2页浏览型号RN1112(TE85L,F)的Datasheet PDF文件第3页浏览型号RN1112(TE85L,F)的Datasheet PDF文件第4页浏览型号RN1112(TE85L,F)的Datasheet PDF文件第5页 
RN1112,RN1113  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1112, RN1113  
and Driver Circuit Applications  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
z With built-in bias resistors  
z Simplified circuit design  
z Reduced number of parts and simplified process  
z Complementary to RN2112 and RN2113  
Equivalent Circuit  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
JEDEC  
―
―
JEITA  
5
V
TOSHIBA  
2-2H1A  
Weight: 2.4mg (typ.)  
Collector current  
I
100  
mA  
mW  
°C  
°C  
c
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
c
T
150  
j
T
stg  
−55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
100  
100  
700  
0.3  
―
nA  
nA  
―
CBO  
CB  
EB  
CE  
E
I
―
= 5 V, I = 0  
C
EBO  
DC current gain  
h
―
= 5 V, I = 1 mA  
120  
―
―
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Transition frequency  
V
―
I
= 5 mA, I = 0.25 mA  
0.1  
250  
3
V
C
B
f
―
V
V
= 10 V, I = 5 mA  
―
MHz  
pF  
T
CE  
CB  
C
―
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
E
―
6
ob  
RN1112  
Input resistor  
15.4  
32.9  
22  
47  
28.6  
61.1  
R1  
―
―
kΩ  
RN1113  
1
2010-03-07  
12345

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