RN1112F

更新时间： 2024-09-21 09:46:19

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
5页	160K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RN1112F 数据手册

RN1112F,RN1113F

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1112F,RN1113F

And Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit

Unit: mm

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2112F, RN2113F

Equivalent Circuit

Maximum Ratings (Ta = 25°C)

Characterisstic

Collector-base voltage

Symbol

Rating

Unit

JEDEC

EIAJ

TOSHIBA

―

CBO

CEO

EBO

2-2HA1A

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

100

150

−55~150

stg

Electrical Characteristics (Ta = 25°C)

Test

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Circuit

―

Collector cut-off current

Emitter cut-off current

= 50V, I = 0

100

700

0.3

―

CBO

= 5V, I = 0

―

EBO

DC current gain

= 5V, I = 1mA

120

―

Collector-emitter saturation voltage

Translation frequency

= 5mA, I = 0.25mA

0.1

250

―

CE (sat)

= 10V, I = 5mA

MHz

―

Collector output capacitance

= 10V, I = 0, f = 1MHz

CB E

―

RN1112F

Input resistor

15.4

32.9

28.6

61.1

―

kΩ

RN1113F

2001-06-07

12 3 4 5

中文翻译

下载PDF

与RN1112F相关器件

型号	品牌	获取价格	描述	数据表
RN1112FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1112FT	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transi
RN1112FT(TE85L)	TOSHIBA	获取价格	RN1112FT(TE85L)
RN1112FT(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1112FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1112MFV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1L1A, VESM, 3 PIN,
RN1112MFV(TL3,T)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1112MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1112MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 100mA 50volts 3Pin 22Kohms
RN1113	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications