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RN1111MFV(TPL3)

更新时间： 2024-11-25 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 118K
描述
Digital Transistors 100mA 50volts 3Pin 10Kohms

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中文翻译

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RN1111MFV(TPL3) 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.69Base Number Matches：1

RN1111MFV(TPL3) 数据手册

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RN1110MFV,RN1111MFV  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1110MFV,RN1111MFV  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
1.2 ± 0.05  
0.80 ± 0.05  
z
z
Ultra-small package, suited to very high density mounting  
Incorporating a bias resistor into the transistor reduces the number of parts, so  
enabling the manufacture of ever more compact equipment and lowering  
assembly cost.  
1
z
z
A wide range of resistor values is available for use in various circuits.  
Complementary to the RN2110MFV~RN2111MFV  
3
2
Equivalent Circuit  
1. BASE  
2. EMITTER  
3. COLLECTOR  
VESM  
JEDEC  
JEITA  
―
―
Absolute Maximum Ratings (Ta = 25°C)  
TOSHIBA  
2-1L1A  
Weight: 0.0015 g (typ.)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
5
V
Collector current  
I
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
150  
C
T
150  
j
T
stg  
−55~150  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Collector cutoff current  
Symbol  
Test Condition  
= 50 V, I = 0  
Min  
Typ.  
Max  
Unit  
I
―
V
V
V
―
―
―
―
100  
100  
700  
0.3  
―
nA  
nA  
―
V
CBO  
CB  
EB  
CE  
E
Emitter cutoff current  
I
―
= 5 V, I = 0  
C
EBO  
DC current gain  
h
―
= 5 V, I = 1 mA  
120  
―
―
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Collector output capacitance  
V
―
I
= 5 mA, I = 0.25 mA  
0.1  
0.7  
4.7  
10  
C
B
C
―
V
= 10 V, I = 0, f = 1 MHz  
CB E  
―
pF  
ob  
RN1110MFV  
Input resistor  
3.29  
7
6.11  
13  
R1  
―
―
kΩ  
RN1111MFV  
1
2007-11-01  
12345

中文翻译

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