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RN1111CT PDF预览

RN1111CT

更新时间: 2024-02-15 00:08:05
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体驱动器开关小信号双极晶体管
页数 文件大小 规格书
6页 160K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN1111CT 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.7
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

RN1111CT 数据手册

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RN1110CT, RN1111CT  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1110CT,RN1111CT  
Switching Applications  
Unit: mm  
Inverter Circuit Applications  
0.6±0.05  
Interface Circuit Applications  
0.5±0.03  
Driver Circuit Applications  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
Complementary to RN2110CT, RN2111CT  
0.05±0.03  
0.35±0.02  
0.15±0.03  
Equivalent Circuit  
C
1.BASE  
R1  
2.EMITTER  
3.COLLECOTR  
B
CST3  
JEDEC  
JEITA  
E
TOSHIBA  
2-1J1A  
Absolute Maximum Ratings (Ta = 25°C)  
Weight:0.75 mg (typ.)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
20  
V
V
Collector-emitter voltage  
Emitter-base voltage  
20  
5
50  
V
Collector current  
I
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
50  
C
T
j
150  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-04-13  

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