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RN1111F(F) PDF预览

RN1111F(F)

更新时间： 2024-02-13 15:51:10
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
5页 281K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR

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中文翻译

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RN1111F(F) 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.8最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：120元件数量：1
极性/信道类型：NPN最大功率耗散 (Abs)：0.1 W
子类别：BIP General Purpose Small Signals表面贴装：YES
晶体管元件材料：SILICONBase Number Matches：1

RN1111F(F) 数据手册

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RN1110F,RN1111F  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1110F,RN1111F  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
Unit: mm  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2110F, RN2111F  
Equivalent Circuit  
Absolute Maximum Ratings (Ta = 25°C)  
Characterisstic  
Collector-base voltage  
Symbol  
Rating  
Unit  
JEDEC  
JEITA  
⎯
⎯
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
TOSHIBA  
2-2HA1A  
5
V
Weight: 2.3 mg (typ.)  
Collector current  
I
100  
mA  
mW  
°C  
°C  
c
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
c
T
150  
j
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 50V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
100  
100  
700  
0.3  
―
nA  
nA  
―
CBO  
CB  
EB  
CE  
E
I
―
= 5V, I = 0  
C
EBO  
DC current gain  
h
= 5V, I = 1mA  
120  
―
―
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Translation frequency  
V
―
―
I
= 5mA, I = 0.25mA  
0.1  
250  
3
V
C
B
f
V
V
= 10V, I = 5mA  
―
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= 10V, I = 0, f = 1MHz  
E
―
6
ob  
RN1110F  
RN1111F  
3.29  
7
4.7  
10  
6.11  
13  
Input resistor  
―
―
kΩ  
R1  
1
2007-11-01  
12345

中文翻译

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