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RN1109FT PDF预览

RN1109FT

更新时间: 2024-01-06 21:51:39
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
6页 176K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP General Purpose Small Signal

RN1109FT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.59
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 0.47最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

RN1109FT 数据手册

 浏览型号RN1109FT的Datasheet PDF文件第2页浏览型号RN1109FT的Datasheet PDF文件第3页浏览型号RN1109FT的Datasheet PDF文件第4页浏览型号RN1109FT的Datasheet PDF文件第5页浏览型号RN1109FT的Datasheet PDF文件第6页 
                                                               
                                                               
RN1107~1109  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1107,RN1108,RN1109  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
l With built-in bias resistors.  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN2107~2109  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN1107  
RN1108  
RN1109  
10  
22  
47  
47  
47  
22  
JEDEC  
EIAJ  
TOSHIBA  
Weight: 2.4mg  
2-2H1A  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
RN1107~1109  
RN1107~1109  
RN1107  
V
V
50  
50  
V
V
CBO  
CEO  
Collector-emitter voltage  
6
Emitter-base voltage  
V
V
RN1108  
7
EBO  
RN1109  
15  
Collector current  
RN1107~1109  
RN1107~1109  
RN1107~1109  
RN1107~1109  
I
100  
100  
150  
55~150  
mA  
mW  
°C  
c
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
c
T
j
T
°C  
stg  
1
2001-06-07  

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