Datasheet > RN1110MFV(TL3MAA)

RN1110MFV(TL3MAA)

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
6页	334K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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技术参数
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RN1110MFV(TL3MAA) 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：	unknown	风险等级：	5.72
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	120
JESD-30 代码：	R-PDSO-F3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

RN1110MFV(TL3MAA) 数据手册

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RN1110MFV,RN1111MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

(Bias Resistor built-in Transistor)

RN1110MFV, RN1111MFV

Unit: mm

1.2 ± 0.05

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

0.80 ± 0.05

Ultra-small package, suited to very high density mounting

Incorporating a bias resistor into the transistor reduces the number of parts, so

enabling the manufacture of ever more compact equipment and lowering

assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN2110MFV, RN2111MFV

Equivalent Circuit

1. BASE

2. EMITTER

3. COLLECTOR

VESM

JEDEC

JEITA

―

TOSHIBA

2-1L1A

Absolute Maximum Ratings (Ta = 25°C)

Weight: 1.5 mg (typ.)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

150

stg

−55 to 150

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)

Pad Dimension（Reference）

Unit：mm

0.5

0.45

1.15

0.4

0.45

Start of commercial production

2005-02

0.4

2014-03-01

12 3 4 5 6

中文翻译

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与RN1110MFV(TL3MAA)相关器件

型号	品牌	获取价格	描述	数据表
RN1110MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1110MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 100mA 50volts 3Pin 4.7Kohms
RN1111	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1111	CALMIRCO	获取价格	BUSSED RESISTOR NETWORK
RN1111(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp
RN1111(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN1111(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp
RN1111,LF(CT	TOSHIBA	获取价格	暂无描述
RN1111ACT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CST3, 3 PIN, BIP General Purpos
RN1111CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver

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