RN1110F

更新时间： 2024-09-20 21:53:51

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
5页	162K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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中文翻译

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数据手册

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RN1110F 数据手册

RN1110F,RN1111F

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1110F,RN1111F

And Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit

Unit: mm

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2110F, RN2111F

Equivalent Circuit

Maximum Ratings (Ta = 25°C)

JEDEC

EIAJ

TOSHIBA

―

Characterisstic

Collector-base voltage

Symbol

Rating

Unit

2-2HA1A

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

100

150

−55~150

stg

Electrical Characteristics (Ta = 25°C)

Test

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Circuit

―

Collector cut-off current

Emitter cut-off current

= 50V, I = 0

―

100

700

0.3

―

CBO

―

= 5V, I = 0

EBO

DC current gain

ꢀ

= 5V, I = 1mA

120ꢀ

―

CE (sat)

Collector-emitter saturation voltage

Translation frequency

―

= 5mA, I = 0.25mA

0.1

250

―ꢀ

= 10V, I = 5mA

―ꢀ

3.29

7ꢀ

MHz

Collector output capacitance

ꢀ

= 10V, I = 0, f = 1MHz

RN1110F

Input resistor

4.7

6.11

―

kΩ

RN1111F

2001-06-07

12 3 4 5

中文翻译

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