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RN1110F PDF预览

RN1110F

更新时间: 2024-11-20 21:53:51
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
5页 162K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1110F 数据手册

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RN1110F,RN1111F  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1110F,RN1111F  
And Driver Circuit Applications  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN2110F, RN2111F  
Equivalent Circuit  
Maximum Ratings (Ta = 25°C)  
JEDEC  
EIAJ  
TOSHIBA  
Characterisstic  
Collector-base voltage  
Symbol  
Rating  
Unit  
2-2HA1A  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
5
V
Collector current  
I
100  
mA  
mW  
°C  
°C  
c
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
c
T
150  
j
T
55~150  
stg  
Electrical Characteristics (Ta = 25°C)  
Test  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Circuit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
V
= 50V, I = 0  
100  
100  
700  
0.3  
nA  
nA  
CBO  
CB  
EB  
CE  
E
I
= 5V, I = 0  
C
EBO  
DC current gain  
h
= 5V, I = 1mA  
120  
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Translation frequency  
V
I
= 5mA, I = 0.25mA  
0.1  
250  
3
V
C
B
f
ꢀ  
V
V
= 10V, I = 5mA  
ꢀ  
ꢀ  
3.29  
7ꢀ  
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= 10V, I = 0, f = 1MHz  
E
6
ob  
RN1110F  
Input resistor  
4.7  
10  
6.11  
13  
kΩ  
R1  
RN1111F  
1
2001-06-07  

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