5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 小信号双极晶体管> RN1110
RN1110 PDF预览

RN1110

更新时间： 2024-09-21 04:07:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
5页 260K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

阅读下载

中文翻译

获取价格

RN1110 数据手册

 浏览型号RN1110的Datasheet PDF文件第2页浏览型号RN1110的Datasheet PDF文件第3页浏览型号RN1110的Datasheet PDF文件第4页浏览型号RN1110的Datasheet PDF文件第5页 
RN1110,RN1111  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1110, RN1111  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z With built-in bias resistors  
z Simplified circuit design  
z Reduced number of parts and simplified manufacturing process  
z Complementary to RN2110~RN2111  
Equivalent Circuit  
Absolute Maximum Ratings (Ta = 25°C)  
JEDEC  
―
―
Characteristic  
Symbol  
Rating  
Unit  
EIAJ  
TOSHIBA  
Weight: 2.4mg  
2-2H1A  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
5
V
Collector current  
I
100  
mA  
mW  
°C  
°C  
c
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
c
T
150  
j
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
0.1  
0.1  
700  
0.3  
―
μA  
μA  
―
CBO  
CB  
EB  
CE  
E
I
―
= 5 V, I = 0  
C
EBO  
DC current gain  
h
―
= 5 V, I = 1 mA  
120  
―
―
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Translation frequency  
V
―
I
= 5 mA, I = 0.25 mA  
0.1  
250  
3
V
C
B
f
―
V
V
= 10 V, I = 5 mA  
―
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
―
= 10 V, I = 0, f = 1 MHz  
E
―
6
ob  
RN1110  
Input resistor  
3.29  
7
4.7  
10  
6.11  
13  
R1  
―
―
kΩ  
RN1111  
1
2007-11-01  
12345

中文翻译

下载PDF

与RN1110相关器件

型号 品牌 获取价格 描述 数据表
RN1110_07 TOSHIBA

获取价格

 		Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1110CT TOSHIBA

获取价格

 		Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1110F TOSHIBA

获取价格

 		Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1110FS(TPL3) TOSHIBA

获取价格

 		Digital Transistors 50mA 20volts 3Pin 4.7Kohms
RN1110FT TOSHIBA

获取价格

 		TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1110FV TOSHIBA

获取价格

 		TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1110MFV TOSHIBA

获取价格

 		TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1L1A, VESM, 3 PIN,
RN1110MFV(TL3MAA) TOSHIBA

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1110MFV(TL3PAV) TOSHIBA

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1110MFV(TPL3) TOSHIBA

获取价格

 		Digital Transistors 100mA 50volts 3Pin 4.7Kohms

与RN1110相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证