5秒后页面跳转
RN1110CT PDF预览

RN1110CT

更新时间: 2024-11-21 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体驱动器开关小信号双极晶体管
页数 文件大小 规格书
6页 160K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN1110CT 技术参数

生命周期:Lifetime Buy包装说明:CHIP CARRIER, R-XBCC-N3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.72其他特性:BUILIT-IN BIAS RESISTOR
外壳连接:COLLECTOR最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:20 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):300JESD-30 代码:R-XBCC-N3
元件数量:1端子数量:3
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:CHIP CARRIER极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RN1110CT 数据手册

 浏览型号RN1110CT的Datasheet PDF文件第2页浏览型号RN1110CT的Datasheet PDF文件第3页浏览型号RN1110CT的Datasheet PDF文件第4页浏览型号RN1110CT的Datasheet PDF文件第5页浏览型号RN1110CT的Datasheet PDF文件第6页 
RN1110CT, RN1111CT  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1110CT,RN1111CT  
Switching Applications  
Unit: mm  
Inverter Circuit Applications  
0.6±0.05  
Interface Circuit Applications  
0.5±0.03  
Driver Circuit Applications  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
Complementary to RN2110CT, RN2111CT  
0.05±0.03  
0.35±0.02  
0.15±0.03  
Equivalent Circuit  
C
1.BASE  
R1  
2.EMITTER  
3.COLLECOTR  
B
CST3  
JEDEC  
JEITA  
E
TOSHIBA  
2-1J1A  
Absolute Maximum Ratings (Ta = 25°C)  
Weight:0.75 mg (typ.)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
20  
V
V
Collector-emitter voltage  
Emitter-base voltage  
20  
5
50  
V
Collector current  
I
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
50  
C
T
j
150  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-04-13  

与RN1110CT相关器件

型号 品牌 获取价格 描述 数据表
RN1110F TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1110FS(TPL3) TOSHIBA

获取价格

Digital Transistors 50mA 20volts 3Pin 4.7Kohms
RN1110FT TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1110FV TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1110MFV TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1L1A, VESM, 3 PIN,
RN1110MFV(TL3MAA) TOSHIBA

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1110MFV(TL3PAV) TOSHIBA

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1110MFV(TPL3) TOSHIBA

获取价格

Digital Transistors 100mA 50volts 3Pin 4.7Kohms
RN1111 TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1111 CALMIRCO

获取价格

BUSSED RESISTOR NETWORK