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RN1109ACT PDF预览

RN1109ACT

更新时间: 2024-01-07 12:19:53
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
6页 170K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1109ACT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.59
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 0.47最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

RN1109ACT 数据手册

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RN1107ACT ~ RN1109ACT  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1107ACT, RN1108ACT, RN1109ACT  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
TOP View  
0.6±0.05  
Extra small package(CST3) is applicable for extra high density  
fabrication.  
0.5±0.03  
Incorporating a bias resistor into a transistor reduces the number of parts,  
which enables the manufacture of ever more compact equipment and  
saves assembly cost.  
Complementary to RN2107ACT to RN2109ACT  
0.05±0.03  
0.35±0.02  
Equivalent Circuit and Bias Resistor Values  
0.15±0.03  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
1.BASE  
2.EMITTER  
3.COLLECTOR  
RN1107ACT  
RN1108ACT  
RN1109ACT  
10  
22  
47  
47  
47  
22  
R1  
B
CST3  
JEDEC  
JEITA  
E
TOSHIBA  
2-1J1A  
Weight: 0.75 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
50  
V
V
CBO  
CEO  
RN1107ACT to RN1109ACT  
Collector-emitter voltage  
50  
RN1107ACT  
6
Emitter-base voltage  
V
V
RN1108ACT  
RN1109ACT  
7
15  
EBO  
Collector current  
I
80  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note1)  
100  
C
RN1107ACT to RN1109ACT  
T
150  
j
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note1 : Mounted on FR4 board (10 mm × 10 mm × 1 mmt)  
1
2009-04-13  

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