5秒后页面跳转
RN1109CT PDF预览

RN1109CT

更新时间: 2024-11-25 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体驱动器开关小信号双极晶体管
页数 文件大小 规格书
6页 157K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN1109CT 技术参数

生命周期:Lifetime Buy包装说明:CHIP CARRIER, R-XBCC-N3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.72Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 0.47外壳连接:COLLECTOR
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:20 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-XBCC-N3元件数量:1
端子数量:3封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

RN1109CT 数据手册

 浏览型号RN1109CT的Datasheet PDF文件第2页浏览型号RN1109CT的Datasheet PDF文件第3页浏览型号RN1109CT的Datasheet PDF文件第4页浏览型号RN1109CT的Datasheet PDF文件第5页浏览型号RN1109CT的Datasheet PDF文件第6页 
RN1107CT ~ RN1109CT  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1107CT,RN1108CT,RN1109CT  
Switching Applications  
Unit: mm  
Inverter Circuit Applications  
0.6±0.05  
Interface Circuit Applications  
0.5±0.03  
Driver Circuit Applications  
Incorporating a bias resistor into a transistor reduces the number of  
parts, which enable the manufacture of ever more compact  
equipment and saves assembly cost.  
Complementary to RN2107CT to RN2109CT  
0.05±0.03  
0.35±0.02  
0.15±0.03  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
1.BASE  
2.EMITTER  
3.COLLECTOR  
RN1107CT  
RN1108CT  
RN1109CT  
10  
22  
47  
47  
47  
22  
R1  
B
CST3  
JEDEC  
JEITA  
E
TOSHIBA  
2-1J1A  
Weight: 0.75 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
20  
V
V
CBO  
CEO  
RN1107CT to RN1109CT  
Collector-emitter voltage  
20  
RN1107CT  
6
Emitter-base voltage  
V
V
RN1108CT  
RN1109CT  
7
15  
EBO  
Collector current  
I
50  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
50  
C
RN1107CT to RN1109CT  
T
150  
j
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-04-13  

与RN1109CT相关器件

型号 品牌 获取价格 描述 数据表
RN1109CT(TPL3) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883
RN1109F ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
RN1109FS(TPL3) TOSHIBA

获取价格

Digital Transistors 50mA 20volts 3Pin 47K x 22Kohms
RN1109FT TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1109FV TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, VESM, 3 PIN, BIP Genera
RN1109MFV TOSHIBA

获取价格

NPN Bias Resistor Built-in Transistors (BRT),
RN1109MFV(TL3MAA) TOSHIBA

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1109MFV(TL3PAV) TOSHIBA

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1110 TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1110_07 TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications