Datasheet > RN1109FS(TPL3)

RN1109FS(TPL3)

更新时间： 2024-11-22 04:33:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	129K
描述
Digital Transistors 50mA 20volts 3Pin 47K x 22Kohms

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数据手册

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RN1109FS(TPL3) 数据手册

RN1107FS~RN1109FS

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1107FS,RN1108FS,RN1109FS

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

Complementary to RN2107FS~RN2109FS

0.8±0.05

1.0±0.05

Equivalent Circuit and Bias Resistor Values

0.1±0.05

Type No.

R1 (kΩ)

R2 (kΩ)

RN1107FS

RN1108FS

RN1109FS

0.1±0.05

1.BASE

2.EMITTER

fSM

3.COLLECOTR

JEDEC

JEITA

―

TOSHIBA

2-1E1A

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2

common)

Weight: 0.0006 g (typ.)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1107FS~

RN1109FS

Collector-emitter voltage

RN1107FS

RN1108FS

RN1109FS

Emitter-base voltage

EBO

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1107FS~

RN1109FS

150

−55~150

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6

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