RN1107FS~RN1109FS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1107FS,RN1108FS,RN1109FS
Switching, Inverter Circuit, Interface Circuit and
Unit: mm
Driver Circuit Applications
•
•
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Complementary to RN2107FS~RN2109FS
1
3
2
0.8±0.05
1.0±0.05
Equivalent Circuit and Bias Resistor Values
0.1±0.05
C
Type No.
R1 (kΩ)
R2 (kΩ)
RN1107FS
RN1108FS
RN1109FS
10
22
47
47
47
22
R1
0.1±0.05
B
1.BASE
2.EMITTER
E
fSM
3.COLLECOTR
JEDEC
JEITA
―
―
TOSHIBA
2-1E1A
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2
common)
Weight: 0.0006 g (typ.)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
V
20
V
V
CBO
CEO
RN1107FS~
RN1109FS
Collector-emitter voltage
20
RN1107FS
RN1108FS
RN1109FS
6
7
Emitter-base voltage
V
V
EBO
15
Collector current
I
50
mA
mW
°C
C
Collector power dissipation
Junction temperature
Storage temperature range
P
50
C
RN1107FS~
RN1109FS
T
150
−55~150
j
T
stg
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01