RN1108MFV

更新时间： 2024-01-09 07:35:44

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
6页	336K
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RN1108MFV 数据手册

RN1107~1109

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1107, RN1108, RN1109

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z With built-in bias resistors.

z Simplified circuit design

z Reduced number of parts and simplified manufacturing process

z Complementary to RN2107~2109

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1107

RN1108

RN1109

JEDEC

―

EIAJ

TOSHIBA

Weight: 2.4mg

2-2H1A

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

RN1107~1109

RN1107

CBO

CEO

Collector-emitter voltage

Emitter-base voltage

RN1108

EBO

RN1109

Collector current

RN1107~1109

100

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

°C

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6

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