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RN1108MFV(TL3MAA) PDF预览

RN1108MFV(TL3MAA)

更新时间: 2024-11-02 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
6页 376K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

RN1108MFV(TL3MAA) 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code:unknown风险等级:5.73
其他特性:BUILT IN BIAS RESISTANCE RATIO IS 2.14最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

RN1108MFV(TL3MAA) 数据手册

 浏览型号RN1108MFV(TL3MAA)的Datasheet PDF文件第2页浏览型号RN1108MFV(TL3MAA)的Datasheet PDF文件第3页浏览型号RN1108MFV(TL3MAA)的Datasheet PDF文件第4页浏览型号RN1108MFV(TL3MAA)的Datasheet PDF文件第5页浏览型号RN1108MFV(TL3MAA)的Datasheet PDF文件第6页 
RN1107MFV~RN1109MFV  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
(Bias Resistor built-in Transistor)  
RN1107MFV, RN1108MFV, RN1109MFV  
Unit: mm  
1.2 ± 0.05  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
0.80 ± 0.05  
z
z
Ultra-small package, suited to very high density mounting  
1
Incorporating a bias resistor into the transistor reduces the number of  
parts, so enabling the manufacture of ever more compact equipment and  
lowering assembly cost.  
3
z
z
A wide range of resistor values is available for use in various circuits.  
Complementary to the RN2107MFV to RN2109MFV  
2
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k) R2 (k)  
1. BASE  
RN1107MFV  
RN1108MFV  
RN1109MFV  
10  
22  
47  
47  
47  
22  
2. EMITTER  
VESM  
JEDEC  
3. COLLECTOR  
JEITA  
TOSHIBA  
2-1L1A  
Weight: 1.5 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
V
V
CBO  
CEO  
RN1107MFV  
to RN1109MFV  
Collector-emitter voltage  
50  
RN1107MFV  
RN1108MFV  
RN1109MFV  
6
7
Emitter-base voltage  
V
V
EBO  
15  
Collector current  
I
100  
mA  
mW  
°C  
C
RN1107MFV  
to  
RN1109MFV  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
150  
C
T
150  
j
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)  
Pad DimensionReference)  
Unitmm  
0.5  
0.45  
1.15  
0.4  
0.45  
Start of commercial production  
0.4  
0.4  
2005-02  
1
2014-03-01  

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