生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
Reach Compliance Code: | unknown | 风险等级: | 5.73 |
其他特性: | BUILT IN BIAS RESISTANCE RATIO IS 2.14 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 80 | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN1109 | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | |
RN1109(T5L,F,T) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor | |
RN1109(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General | |
RN1109(TE85L,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416 | |
RN1109(TE85R) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General | |
RN1109ACT | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | |
RN1109CT | TOSHIBA |
获取价格 |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver | |
RN1109CT(TPL3) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883 | |
RN1109F | ETC |
获取价格 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 | |
RN1109FS(TPL3) | TOSHIBA |
获取价格 |
Digital Transistors 50mA 20volts 3Pin 47K x 22Kohms |