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RN1108MFV(TL3MAA) PDF预览

RN1108MFV(TL3MAA)

更新时间： 2024-11-25 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
6页 376K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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中文翻译

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RN1108MFV(TL3MAA) 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：unknown风险等级：5.73
其他特性：BUILT IN BIAS RESISTANCE RATIO IS 2.14最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

RN1108MFV(TL3MAA) 数据手册

 浏览型号RN1108MFV(TL3MAA)的Datasheet PDF文件第2页浏览型号RN1108MFV(TL3MAA)的Datasheet PDF文件第3页浏览型号RN1108MFV(TL3MAA)的Datasheet PDF文件第4页浏览型号RN1108MFV(TL3MAA)的Datasheet PDF文件第5页浏览型号RN1108MFV(TL3MAA)的Datasheet PDF文件第6页 
RN1107MFV~RN1109MFV  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
(Bias Resistor built-in Transistor)  
RN1107MFV, RN1108MFV, RN1109MFV  
Unit: mm  
1.2 ± 0.05  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
0.80 ± 0.05  
z
z
Ultra-small package, suited to very high density mounting  
1
Incorporating a bias resistor into the transistor reduces the number of  
parts, so enabling the manufacture of ever more compact equipment and  
lowering assembly cost.  
3
z
z
A wide range of resistor values is available for use in various circuits.  
Complementary to the RN2107MFV to RN2109MFV  
2
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (kΩ) R2 (kΩ)  
1. BASE  
RN1107MFV  
RN1108MFV  
RN1109MFV  
10  
22  
47  
47  
47  
22  
2. EMITTER  
VESM  
JEDEC  
3. COLLECTOR  
―
―
JEITA  
TOSHIBA  
2-1L1A  
Weight: 1.5 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
V
V
CBO  
CEO  
RN1107MFV  
to RN1109MFV  
Collector-emitter voltage  
50  
RN1107MFV  
RN1108MFV  
RN1109MFV  
6
7
Emitter-base voltage  
V
V
EBO  
15  
Collector current  
I
100  
mA  
mW  
°C  
C
RN1107MFV  
to  
RN1109MFV  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
150  
C
T
150  
j
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)  
Pad Dimension（Reference）  
Unit：mm  
0.5  
0.45  
1.15  
0.4  
0.45  
Start of commercial production  
0.4  
0.4  
2005-02  
1
2014-03-01  
123456

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