生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.48 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 2.14 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 70 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
RN1109(TE85L,F) | TOSHIBA | PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416 |
获取价格 |
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RN1109(TE85R) | TOSHIBA | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General |
获取价格 |
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RN1109ACT | TOSHIBA | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
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RN1109CT | TOSHIBA | Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver |
获取价格 |
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RN1109CT(TPL3) | TOSHIBA | PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883 |
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RN1109F | ETC | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
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RN1109FS(TPL3) | TOSHIBA | Digital Transistors 50mA 20volts 3Pin 47K x 22Kohms |
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RN1109FT | TOSHIBA | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera |
获取价格 |
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RN1109FV | TOSHIBA | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, VESM, 3 PIN, BIP Genera |
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RN1109MFV | TOSHIBA | NPN Bias Resistor Built-in Transistors (BRT), |
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