5秒后页面跳转
捷配首页

Datasheet > RN1108CT(TPL3)
RN1108CT(TPL3) PDF预览

RN1108CT(TPL3)

更新时间： 2024-02-20 08:55:49
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
6页 158K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883

阅读下载

中文翻译

获取价格

RN1108CT(TPL3) 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84
最大集电极电流 (IC)：0.05 A最小直流电流增益 (hFE)：120
元件数量：1极性/信道类型：NPN
最大功率耗散 (Abs)：0.05 W子类别：BIP General Purpose Small Signal
表面贴装：YES晶体管元件材料：SILICON
Base Number Matches：1

RN1108CT(TPL3) 数据手册

 浏览型号RN1108CT(TPL3)的Datasheet PDF文件第2页浏览型号RN1108CT(TPL3)的Datasheet PDF文件第3页浏览型号RN1108CT(TPL3)的Datasheet PDF文件第4页浏览型号RN1108CT(TPL3)的Datasheet PDF文件第5页浏览型号RN1108CT(TPL3)的Datasheet PDF文件第6页 
RN1107CT ~ RN1109CT  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1107CT, RN1108CT, RN1109CT  
Switching Applications  
Unit: mm  
Inverter Circuit Applications  
0.6±0.05  
Interface Circuit Applications  
0.5±0.03  
Driver Circuit Applications  
３
•
Incorporating a bias resistor into a transistor reduces the number of  
parts, which enable the manufacture of ever more compact  
equipment and saves assembly cost.  
１
２
•
Complementary to RN2107CT to RN2109CT  
0.05±0.03  
0.35±0.02  
0.15±0.03  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
1.BASE  
2.EMITTER  
3.COLLECTOR  
RN1107CT  
RN1108CT  
RN1109CT  
10  
22  
47  
47  
47  
22  
R1  
B
CST3  
JEDEC  
JEITA  
―
―
E
TOSHIBA  
2-1J1A  
Weight: 0.75 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
20  
V
V
CBO  
CEO  
RN1107CT to RN1109CT  
Collector-emitter voltage  
20  
RN1107CT  
6
Emitter-base voltage  
V
V
RN1108CT  
RN1109CT  
7
15  
EBO  
Collector current  
I
50  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
50  
C
RN1107CT to RN1109CT  
T
150  
j
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2004-10  
1
2014-03-01  
123456

中文翻译

下载PDF

与RN1108CT(TPL3)相关器件

型号 品牌 描述 获取价格 数据表
RN1108F ETC TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416

获取价格
RN1108FS TOSHIBA TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, FSM, 2-1E1A, 3 PIN, BIP General

获取价格
RN1108FS(TPL3) TOSHIBA PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SMT

获取价格
RN1108FT TOSHIBA TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, THIN, TESM, 2-1B1A, 3 PIN, BIP

获取价格
RN1108MFV TOSHIBA 暂无描述

获取价格
RN1108MFV(TL3MAA) TOSHIBA Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

获取价格
RN1109 TOSHIBA Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

获取价格
RN1109(T5L,F,T) TOSHIBA Small Signal Bipolar Transistor

获取价格
RN1109(TE85L) TOSHIBA TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General

获取价格
RN1109(TE85L,F) TOSHIBA PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416

获取价格
RN1109(TE85R) TOSHIBA TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General

获取价格
RN1109ACT TOSHIBA Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

获取价格
RN1109CT TOSHIBA Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver

获取价格
RN1109CT(TPL3) TOSHIBA PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883

获取价格
RN1109F ETC TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416

获取价格
RN1109FS(TPL3) TOSHIBA Digital Transistors 50mA 20volts 3Pin 47K x 22Kohms

获取价格
RN1109FT TOSHIBA TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera

获取价格
RN1109FV TOSHIBA TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, VESM, 3 PIN, BIP Genera

获取价格
RN1109MFV TOSHIBA NPN Bias Resistor Built-in Transistors (BRT),

获取价格
RN1109MFV(TL3MAA) TOSHIBA Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

获取价格

与RN1108CT(TPL3)相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证