生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
其他特性: | BUILT-IN BIAS RESISTOR | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 80 | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
RN1108CT(TPL3) | TOSHIBA | PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883 |
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RN1108F | ETC | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
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RN1108FS | TOSHIBA | TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, FSM, 2-1E1A, 3 PIN, BIP General |
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RN1108FS(TPL3) | TOSHIBA | PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SMT |
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RN1108FT | TOSHIBA | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, THIN, TESM, 2-1B1A, 3 PIN, BIP |
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RN1108MFV | TOSHIBA | 暂无描述 |
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