Datasheet > RN1107MFV(TPL3)

RN1107MFV(TPL3)

更新时间： 2024-11-21 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	361K
描述
Digital Transistors 100mA 50volts 3Pin 10K x 47Kohms

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中文翻译

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技术参数
数据手册

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RN1107MFV(TPL3) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.67	Is Samacsys：	N
Base Number Matches：	1

RN1107MFV(TPL3) 数据手册

RN1107MFV~RN1109MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

(Bias Resistor built-in Transistor)

RN1107MFV,RN1108MFV,RN1109MFV

Unit: mm

1.2 ± 0.05

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

0.80 ± 0.05

Ultra-small package, suited to very high density mounting

Incorporating a bias resistor into the transistor reduces the number of

parts, so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN2107MFV to RN2109MFV

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ) R2 (kΩ)

1. BASE

RN1107MFV

RN1108MFV

RN1109MFV

2. EMITTER

VESM

JEDEC

3. COLLECTOR

―

JEITA

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

RN1107MFV

to RN1109MFV

CBO

CEO

Collector-emitter voltage

RN1107MFV

RN1108MFV

RN1109MFV

Emitter-base voltage

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

150

RN1107MFV

to RN1109MFV

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)

Pad Dimension（Reference）

Unit：mm

0.5

0.45

1.15

0.4

0.45

0.4

2010-05-12

12 3 4 5 6

中文翻译

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与RN1107MFV(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN1108	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1108(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1108(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN1108(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1108ACT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1108ACT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,80MA I(C),SMT
RN1108CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1108CT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883
RN1108F	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
RN1108FS	TOSHIBA	获取价格	TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, FSM, 2-1E1A, 3 PIN, BIP General

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