RN1107~1109
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107, RN1108, RN1109
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
z With built-in bias resistors.
z Simplified circuit design
z Reduced number of parts and simplified manufacturing process
z Complementary to RN2107 to 2109
Equivalent Circuit and Bias Resistor Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1107
RN1108
RN1109
10
22
47
47
47
22
JEDEC
―
―
JEITA
TOSHIBA
2-2H1A
Weight: 2.4mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Symbol
Rating
Unit
RN1107 to 1109
RN1107 to 1109
RN1107
V
V
50
V
V
CBO
CEO
Collector-emitter voltage
50
6
7
Emitter-base voltage
V
V
RN1108
EBO
RN1109
15
Collector current
RN1107 to 1109
RN1107 to 1109
RN1107 to 1109
RN1107 to 1109
I
100
mA
mW
°C
C
Collector power dissipation
Junction temperature
Storage temperature range
P
100
C
T
150
j
T
stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-04-06