Datasheet > PSMN7R0-100ES,127

PSMN7R0-100ES,127

更新时间： 2024-09-16 19:37:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	227K
描述
PSMN7R0-100ES - N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. TO-262 3-Pin

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PSMN7R0-100ES,127 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-262
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.75	Base Number Matches：	1

PSMN7R0-100ES,127 数据手册

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PSMN7R0-100ES

N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.

Rev. 03 — 23 February 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

High efficiency due to low switching

Suitable for standard level gate drive

and conduction losses

1.3 Applications

DC-to-DC converters

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

100

[1]

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

269

175

T_j

junction temperature

-55

°C

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 100 A; V_sup≤ 100 V;

unclamped; R_GS= 50 Ω

315

avalanche energy

Dynamic characteristics

Q_GD

gate-drain charge

V_GS= 10 V; I_D= 25 A;

V_DS= 50 V; see Figure 15

and 14

Q_G(tot)

total gate charge

V_GS= 10 V; I_D= 25 A;

V_DS= 50 V; see Figure 14

and 15

125

12 3 4 5 6 7...15

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