是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | D2PAK | 包装说明: | PLASTIC, D2PAK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.19 | 雪崩能效等级(Eas): | 300 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 150 V | 最大漏极电流 (Abs) (ID): | 55.5 A |
最大漏极电流 (ID): | 55.5 A | 最大漏源导通电阻: | 0.03 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 250 W |
最大脉冲漏极电流 (IDM): | 222 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN030-150B_10 | NXP |
获取价格 |
N-channel TrenchMOS SiliconMAX standard level FET |
![]() |
PSMN030-150P | NXP |
获取价格 |
N-channel TrenchMOS transistor |
![]() |
PSMN030-150P | NEXPERIA |
获取价格 |
N-channel TrenchMOS SiliconMAX standard level FETProduction |
![]() |
PSMN030-150P,127 | NXP |
获取价格 |
N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin |
![]() |
PSMN030-60YS | NXP |
获取价格 |
N-channel LFPAK 60 V 24.7 mΩ standard level M |
![]() |
PSMN030-60YS | NEXPERIA |
获取价格 |
N-channel LFPAK 60 V 24.7 mΩ standard level M |
![]() |
PSMN030-60YS,115 | NXP |
获取价格 |
PSMN030-60YS - N-channel LFPAK 60 V 24.7 mΩ s |
![]() |
PSMN030-60YS_1010 | NXP |
获取价格 |
N-channel LFPAK 60 V 24.7 mΩ standard level |
![]() |
PSMN033-100HL | NEXPERIA |
获取价格 |
N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technologyProduct |
![]() |
PSMN034-100BS | NXP |
获取价格 |
N-channel 100 V 34.5 m standard level MOSFET in D2PAK |
![]() |