Datasheet > PSMN030-150B_10

PSMN030-150B_10

更新时间： 2024-11-16 10:00:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	166K
描述
N-channel TrenchMOS SiliconMAX standard level FET

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PSMN030-150B_10 数据手册

PSMN030-150B

N-channel TrenchMOS SiliconMAX standard level FET

Rev. 02 — 13 December 2010

Product data sheet

1. Product profile

1.1 General description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in

a plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Higher operating power due to low

Suitable for high frequency

applications due to fast switching

characteristics

thermal resistance

Low conduction losses due to low

on-state resistance

1.3 Applications

DC-to-DC converters

Switched-mode power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

150

55.5

250

I_D

drain current

T_mb= 25 °C

P_tot

total power

dissipation

Static characteristics

R_DSondrain-source

on-state resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 25 A; T_j= 25 °C

mΩ

V_GS= 10 V; I_D= 55.5 A;

V_DS= 120 V; T_j= 25 °C

12 3 4 5 6 7...12

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