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PSMN030-150P PDF预览

PSMN030-150P

更新时间: 2023-09-03 20:34:54
品牌 Logo 应用领域
安世 - NEXPERIA 局域网开关脉冲晶体管
页数 文件大小 规格书
13页 833K
描述
N-channel TrenchMOS SiliconMAX standard level FETProduction

PSMN030-150P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:not_compliant
风险等级:5.71Is Samacsys:N
雪崩能效等级(Eas):300 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (ID):55.5 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):222 A
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PSMN030-150P 数据手册

 浏览型号PSMN030-150P的Datasheet PDF文件第2页浏览型号PSMN030-150P的Datasheet PDF文件第3页浏览型号PSMN030-150P的Datasheet PDF文件第4页浏览型号PSMN030-150P的Datasheet PDF文件第5页浏览型号PSMN030-150P的Datasheet PDF文件第6页浏览型号PSMN030-150P的Datasheet PDF文件第7页 
PSMN030-150P  
N-channel TrenchMOS SiliconMAX standard level FET  
Rev. 02 — 16 December 2010  
Product data sheet  
1. Product profile  
1.1 General description  
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in  
a plastic package using TrenchMOS technology. This product is designed and qualified for  
use in computing, communications, consumer and industrial applications only.  
1.2 Features and benefits  
„ Higher operating power due to low  
„ Suitable for high frequency  
applications due to fast switching  
characteristics  
thermal resistance  
„ Low conduction losses due to low  
on-state resistance  
1.3 Applications  
„ DC-to-DC converters  
„ Switched-mode power supplies  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source voltage  
drain current  
Tj 25 °C; Tj 175 °C  
-
-
-
-
-
-
150  
55.5  
250  
V
ID  
Tmb = 25 °C  
A
Ptot  
total power dissipation  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 25 A;  
Tj = 25 °C  
-
-
24  
38  
30  
50  
mΩ  
VGS = 10 V; ID = 55.5 A;  
VDS = 120 V; Tj = 25 °C  
nC  

PSMN030-150P 替代型号

型号 品牌 替代类型 描述 数据表
PSMN030-150P,127 NXP

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