5秒后页面跳转
IRF9610 PDF预览

IRF9610

更新时间: 2024-09-08 05:39:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 1644K
描述
Power MOSFET

IRF9610 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.07外壳连接:DRAIN
配置:SINGLE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):1.8 A最大漏极电流 (ID):1.8 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):20 W最大脉冲漏极电流 (IDM):7 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF9610 数据手册

 浏览型号IRF9610的Datasheet PDF文件第2页浏览型号IRF9610的Datasheet PDF文件第3页浏览型号IRF9610的Datasheet PDF文件第4页浏览型号IRF9610的Datasheet PDF文件第5页浏览型号IRF9610的Datasheet PDF文件第6页浏览型号IRF9610的Datasheet PDF文件第7页 
IRF9610, SiHF9610  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
- 200  
• P-Channel  
Available  
RDS(on) (Ω)  
VGS = - 10 V  
3.0  
• Fast Switching  
• Ease of Paralleling  
RoHS*  
Qg (Max.) (nC)  
11  
7.0  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
4.0  
Configuration  
Single  
DESCRIPTION  
S
The Power MOSFETs technology is the key to Vishay’s  
advanced line of Power MOSFET transistors. The efficient  
geometry and unique processing of the Power MOSFETs  
design achieve very low on-state resistance combined with  
high transconductance and extreme device ruggedness.  
TO-220  
G
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
S
D
D
P-Channel MOSFET  
G
ORDERING INFORMATION  
Package  
TO-220  
IRF9610PbF  
SiHF9610-E3  
IRF9610  
Lead (Pb)-free  
SnPb  
SiHF9610  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
- 200  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25  
C = 100  
- 1.8  
Continuous Drain Current  
V
GS at - 10 V  
ID  
T
- 1.0  
- 7.0  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.16  
W/°C  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
ILM  
20  
Inductive Current, Clamp  
- 7.0  
A
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
- 5.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
10  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).  
b. Not applicable.  
c. ISD - 1.8 A, dI/dt 70 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91080  
S-Pending-Rev. A, 20-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

与IRF9610相关器件

型号 品牌 获取价格 描述 数据表
IRF9610-004 VISHAY

获取价格

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRF9610-004PBF VISHAY

获取价格

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRF9610-009 INFINEON

获取价格

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRF9610-009PBF INFINEON

获取价格

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRF9610-017PBF VISHAY

获取价格

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRF9610-018PBF VISHAY

获取价格

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRF9610F INFINEON

获取价格

Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semi
IRF9610FPBF VISHAY

获取价格

Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semi
IRF9610FPBF INFINEON

获取价格

Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semi
IRF9610FXPBF INFINEON

获取价格

Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semi