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IRF9620 PDF预览

IRF9620

更新时间: 2024-11-17 22:31:39
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 62K
描述
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET

IRF9620 数据手册

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IRF9620  
Data Sheet  
July 1999  
File Number 2283.2  
3.5A, 200V, 1.500 Ohm, P-Channel Power  
MOSFET  
Features  
• 3.5A, 200V  
This P-Channel enhancement mode silicon gate power field  
effect transistor is an advanced power MOSFET designed,  
tested and guaranteed to withstand a specified level of  
energy in the breakdown avalanche mode of operation. All of  
these power MOSFETs are designed for applications such  
as switching regulators, switching convertors, motor drivers,  
relay drivers, and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated  
circuits.  
• r  
= 1.500  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Symbol  
Formerly developmental type TA17502.  
D
Ordering Information  
G
PART NUMBER  
PACKAGE  
BRAND  
IRF9620  
IRF9620  
TO-220AB  
S
NOTE: When ordering, use the entire part number.  
Packaging  
JEDEC TO-220AB  
SOURCE  
DRAIN  
GATE  
DRAIN (FLANGE)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-21  

IRF9620 替代型号

型号 品牌 替代类型 描述 数据表
SIHF9620-E3 VISHAY

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