Datasheet > IRF9630

IRF9630

更新时间： 2024-09-30 12:34:51

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	2946K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF9630 数据手册

IRF9630, SiHF9630

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 200

Available

• Repetitive Avalanche Rated

• P-Channel

R_DS(on)(Max.) (Ω)

V_GS= - 10 V

0.80

RoHS*

Q_g(Max.) (nC)

5.4

COMPLIANT

• Fast Switching

_gs(nC)

_gd(nC)

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

P-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRF9630PbF

SiHF9630-E3

IRF9630

Lead (Pb)-free

SnPb

SiHF9630

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

- 200

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

- 6.5

- 4.0

- 26

Continuous Drain Current

V_GSat - 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.59

500

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

- 6.4

7.4

E_AR

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

- 5.0

- 55 to + 150

300^d

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 50 V, starting T_J= 25 °C, L = 17 mH, R_G= 25 Ω, I_AS= - 6.5 A (see fig. 12).

c. I_SD≤ - 6.5 A, dI/dt ≤ 120 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

www.kersemi.com

12 3 4 5 6 7

中文翻译

下载PDF

与IRF9630相关器件

型号	品牌	获取价格	描述	数据表
IRF9630-004	VISHAY	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met
IRF9630-004PBF	VISHAY	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met
IRF9630-009	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met
IRF9630-009PBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met
IRF9630F	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IRF9630FPBF	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IRF9630FX	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IRF9630FXPBF	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IRF9630PBF	KERSEMI	获取价格	Power MOSFET
IRF9630PBF	VISHAY	获取价格	Power MOSFET

与IRF9630相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

29
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

24
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

25
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

35

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF9630

IRF9630 数据手册

与IRF9630相关器件

与IRF9630相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF9630

IRF9630 数据手册

与IRF9630相关器件

与IRF9630相关文章

您还可以找

您在本页遇到什么问题？