IRF9620PBF

更新时间： 2024-01-25 13:02:17

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	1926K
描述
Power MOSFET

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中文翻译

获取价格

技术参数
数据手册

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IRF9620PBF 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	JESD-609代码：	e3
湿度敏感等级：	1	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

IRF9620PBF 数据手册

IRF9620, SiHF9620

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 200

Available

• P-Channel

_DS(on)(Ω)

V_GS= - 10 V

1.5

RoHS*

• Fast Switching

• Ease of Paralleling

Q_g(Max.) (nC)

COMPLIANT

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

P-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRF9620PbF

SiHF9620-E3

IRF9620

Lead (Pb)-free

SnPb

SiHF9620

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

- 200

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

- 3.5

Continuous Drain Current

V_GSat - 10 V

I_D

- 2.0

- 14

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.32

W/°C

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^b

dV/dt

T_J, T_stg

- 5.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^c

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. I_SD≤ - 3.5 A, dI/dt ≤ 95 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

c. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91082

S-81272-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7

中文翻译

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与IRF9620PBF相关器件

型号	品牌	获取价格	描述	数据表
IRF9620S	INFINEON	获取价格	Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)
IRF9620S, SiHF9620S	VISHAY	获取价格	Power MOSFET
IRF9620SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF9620STRL	VISHAY	获取价格	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met
IRF9620STRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met
IRF9620STRR	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met
IRF9621	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 2A I(D) \| TO-220AB
IRF9622	VISHAY	获取价格	Transistor
IRF9622	SAMSUNG	获取价格	Power Field-Effect Transistor, 3A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal
IRF9623	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 1.5A I(D) \| TO-220AB

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