是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 6 weeks | 风险等级: | 0.64 |
Samacsys Confidence: | 4 | Samacsys Status: | Released |
Samacsys PartID: | 186751 | Samacsys Pin Count: | 3 |
Samacsys Part Category: | Transistor | Samacsys Package Category: | Transistor Outline, Vertical |
Samacsys Footprint Name: | TO-220-1 | Samacsys Released Date: | 2018-08-09 15:28:11 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 6.5 A | 最大漏极电流 (ID): | 6.5 A |
最大漏源导通电阻: | 0.8 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 74 W | 最大脉冲漏极电流 (IDM): | 26 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF9630S | INFINEON |
获取价格 |
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) | |
IRF9630S | VISHAY |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met | |
IRF9630S, SiHF9630S | VISHAY |
获取价格 |
Power MOSFET | |
IRF9630SPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met | |
IRF9630STRL | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met | |
IRF9630STRLPBF | VISHAY |
获取价格 |
TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, | |
IRF9630STRR | VISHAY |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met | |
IRF9630STRR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met | |
IRF9631 | SAMSUNG |
获取价格 |
P-CHANNEL POWER MOSFETS | |
IRF9632 | VISHAY |
获取价格 |
Transistor |