Datasheet > IRF9620S, SiHF9620S

IRF9620S, SiHF9620S

更新时间： 2024-10-01 14:55:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	195K
描述
Power MOSFET

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IRF9620S, SiHF9620S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

D²PAK (TO-263)

• Available in tape and reel

• Dynamic dV/dt rating

• P-channel

Available

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

P-Channel MOSFET

PRODUCT SUMMARY

V_DS(V)

DESCRIPTION

-200

The power MOSFETs technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of the Power MOSFETs

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

_DS(on)(Ω)

V_GS= -10 V

1.5

Q_gmax. (nC)

_gs(nC)

_gd(nC)

The D²PAK (TO-263) is a surface-mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

possible on-resistance in any existing surface-mount

package. The D²PAK (TO-263) is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2.0 W in a typical surface

mount application.

Configuration

Single

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF9620S-GE3

IRF9620SPbF

D²PAK (TO-263)

SiHF9620STRL-GE3 ^a

IRF9620STRLPbF ^a

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-200

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

-3.5

Continuous Drain Current

V_GSat -10 V

I_D

T_C= 100 °C

-2.0

Pulsed Drain Current ^a

I_DM

-14

Linear Derating Factor

Linear Derating Factor (PCB mount) ^e

0.32

0.025

-14

W/°C

Inductive Current, Clamp

I_LM

P_D

Maximum Power Dissipation

_C= 25 °C

Maximum Power Dissipation (PCB mount) ^e

Peak Diode Recovery dV/dt ^c

T_A= 25 °C

3.0

dV/dt

-5.0

V/ns

°C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature) ^d

T_J, T_stg

-55 to +150

300

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5)

b. Not Applicabl

c. I_SD≤ -3.5 A, dI/dt ≤ 95 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1” square PCB (FR-4 or G-10 material)

S21-0904-Rev. D, 30-Aug-2021

Document Number: 91083

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRF9620S, SiHF9620S相关器件

型号	品牌	获取价格	描述	数据表
IRF9620SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF9620STRL	VISHAY	获取价格	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met
IRF9620STRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met
IRF9620STRR	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met
IRF9621	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 2A I(D) \| TO-220AB
IRF9622	VISHAY	获取价格	Transistor
IRF9622	SAMSUNG	获取价格	Power Field-Effect Transistor, 3A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal
IRF9623	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 1.5A I(D) \| TO-220AB
IRF9630	INTERSIL	获取价格	6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs
IRF9630	INFINEON	获取价格	Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)

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