Datasheet > PHPT60603PYX

PHPT60603PYX

更新时间： 2024-11-06 20:06:47

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	301K
描述
PHPT60603PY - 60 V, 3 A PNP high power bipolar transistor SOIC 4-Pin

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技术参数
数据手册
替代型号

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PHPT60603PYX 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOIC	包装说明：	ROHS COMPLIANT, PLASTIC, POWER, SOP-8, LFPAK56-4
针数：	4	Reach Compliance Code：	unknown
风险等级：	5.74	Base Number Matches：	1

PHPT60603PYX 数据手册

PHPT60603PY

60 V, 3 A PNP high power bipolar transistor

13 January 2014

Product data sheet

1. General description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device

(SMD) power plastic package.

NPN complement: PHPT60603NY.

2. Features and benefits

High thermal power dissipation capability

•

Suitable for high temperature applications up to 175 °C

Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

High energy efficiency due to less heat generation

AEC-Q101 qualified

3. Applications

Power management

Load switch

Linear mode voltage regulator

Backlighting applications

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-60

I_C

collector current

-3

I_CM

peak collector current t_p≤ 1 ms; pulsed

-8

R_CEsat

collector-emitter

I_C= -3 A; I_B= -300 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

120

mΩ

saturation resistance

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PHPT60603PYX 替代型号

型号	品牌	替代类型	描述	数据表
PHPT60603PY	NXP	完全替代	TRANSISTOR POWER TRANSISTOR, BIP General Purpose Power

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