Datasheet > PHPT610035PK

PHPT610035PK

更新时间： 2024-11-07 11:12:27

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
16页	722K
描述
PNP/PNP matched high power double bipolar transistorProduction

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PHPT610035PK 数据手册

PHPT610035PK

PNP/PNP matched high power double bipolar transistor

24 October 2014

Product data sheet

1. General description

PNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D)

Surface-Mounted Device (SMD) power plastic package. Matched version of

PHPT610030PK.

NPN/NPN complement: PHPT610035NK.

2. Features and benefits

Current gain matching 10 %

High thermal power dissipation capability

Suitable for high temperature applications up to 175 °C

Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

High energy efficiency due to less heat generation

AEC-Q101 qualified

•

3. Applications

Current mirror

Motor control

Power management

Backlighting applications

Relay replacement

Differential amplifiers

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

-100

-3

I_C

collector current

Per transistor

R_CEsat

collector-emitter

I_C= -2 A; I_B= -200 mA; pulsed;

110

180

mΩ

saturation resistance

t_p≤ 300 µs; δ ≤ 0.02; T_amb= 25 °C

12 3 4 5 6 7...16

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