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PHPT61010PY PDF预览

PHPT61010PY

更新时间: 2024-11-07 11:13:07
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
16页 714K
描述
100 V, 10 A PNP high power bipolar transistorProduction

PHPT61010PY 数据手册

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PHPT61010PY  
100 V, 10 A PNP high power bipolar transistor  
20 March 2015  
Product data sheet  
1. General description  
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device  
(SMD) power plastic package.  
NPN complement: PHPT61010NY.  
2. Features and benefits  
High thermal power dissipation capability  
Suitable for high temperature applications up to 175 °C  
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK  
High energy efficiency due to less heat generation  
AEC-Q101 qualified  
3. Applications  
Power management  
Load switch  
Linear mode voltage regulator  
Backlighting applications  
Motor drive  
Relay replacement  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-100  
V
IC  
collector current  
-
-
-
-
-10  
-20  
80  
A
ICM  
peak collector current tp ≤ 1 ms; single pulse  
-
A
RCEsat  
collector-emitter  
IC = -10 A; IB = -1 A; tp ≤ 300 µs;  
δ ≤ 0.02; Tamb = 25 °C; pulsed  
53  
mΩ  
saturation resistance  
 
 
 
 

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