Datasheet > PHPT61003NY

PHPT61003NY

更新时间： 2024-11-03 11:10:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	277K
描述
100 V, 3 A NPN high power bipolar transistorProduction

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PHPT61003NY 数据手册

PHPT61003NY

100 V, 3 A NPN high power bipolar transistor

10 September 2020

Product data sheet

1. General description

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power

plastic package.

PNP complement: PHPT61003PY

2. Features and benefits

•

High thermal power dissipation capability

•

Suitable for high temperature applications up to 175 °C

Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

High energy efficiency due to less heat generation

AEC-Q101 qualified

3. Applications

•

Power management

Loadswitch

Linear mode voltage regulator

Backlighting applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

100

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

I_C= 1 A; I_B= 50 mA; t_p≤ 300 µs;

150

mΩ

saturation resistance

pulsed; δ ≤ 0.02; T_amb= 25 °C

I_C= 3 A; I_B= 300 mA; t_p≤ 300 µs;

pulsed; δ ≤ 0.02; T_amb= 25 °C

110

mΩ

12 3 4 5 6 7...14

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