Datasheet > PHPT61003PY

PHPT61003PY

更新时间： 2024-11-07 11:11:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	714K
描述
100 V, 3A PNP high power bipolar transistorProduction

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PHPT61003PY 数据手册

PHPT61003PY

100 V, 3A PNP high power bipolar transistor

13 January 2014

Product data sheet

1. General description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device

(SMD) power plastic package.

NPN complement: PHPT61003NY

2. Features and benefits

High thermal power dissipation capability

•

Suitable for high temperature applications up to 175 °C

Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

High energy efficiency due to less heat generation

AEC-Q101 qualified

3. Applications

Power management

Loadswitch

Linear mode voltage regulator

Backlighting applications

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-100

I_C

collector current

-3

I_CM

peak collector current t_p≤ 1 ms; single pulse

-8

R_CEsat

collector-emitter

I_C= -2 A; I_B= -200 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

110

180

mΩ

saturation resistance

12 3 4 5 6 7...15

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